High conductive p-type microcrystalline silicon with high crystallinity prepared by high-pressure RF-PECVD

被引：0
|
作者：
Institute of Photo-electronics Thin Film Devices and Technique, Nankai University, Tianjin 300071, China [1 ]
机构：
来源：
Rengong Jingti Xuebao | 2007年 / 1卷 / 85-88期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] Recombination sources in p-type high performance multicrystalline silicon
    Sio, Hang Cheong
    Phang, Sieu Pheng
    Zheng, Peiting
    Wang, Quanzhi
    Chen, Wei
    Jin, Hao
    Macdonald, Daniel
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 56 (08)
  • [42] Effect of substrate temperature on aligned high-density carbon nanotubes deposited by RF-PECVD
    张楷亮
    林新元
    许旺
    苗银萍
    胡凯
    张勇
    OptoelectronicsLetters, 2011, 7 (02) : 85 - 87
  • [43] PROPERTIES OF A-SI100-XALX PREPARED BY HIGH-PRESSURE RF SPUTTERING
    SUZUKI, M
    MARUYAMA, K
    KUMEDA, M
    SHIMIZU, T
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 56 (01): : K49 - K52
  • [44] Effect of substrate temperature on aligned high-density carbon nanotubes deposited by RF-PECVD
    Zhang K.
    Lin X.
    Xu W.
    Miao Y.
    Hu K.
    Zhang Y.
    Optoelectronics Letters, 2011, 7 (2) : 85 - 87
  • [45] Origin of the improved performance of high-deposition-rate microcrystalline silicon solar cells by high-pressure glow discharge
    Matsui, T
    Kondo, M
    Matsuda, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (8A): : L901 - L903
  • [46] High rate deposition of microcrystalline silicon thin films by VHF-PECVD
    Zhao, Zhi-Wen
    Liu, Yu-Ling
    Guangdianzi Jiguang/Journal of Optoelectronics Laser, 2011, 22 (05): : 722 - 724
  • [47] CONDUCTIVE PHTHALOCYANINES UNDER VERY HIGH-PRESSURE
    ONODERA, A
    KAWAI, N
    KOBAYASHI, T
    SOLID STATE COMMUNICATIONS, 1975, 17 (07) : 775 - 778
  • [48] Growth mechanism of microcrystalline silicon at high pressure conditions
    Rath, JK
    Franken, RHJ
    Gordijn, A
    Schropp, REI
    Goedheer, WJ
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2004, 338 : 56 - 60
  • [49] High rate growth of microcrystalline silicon by VHF-GD at high pressure
    Graf, U
    Meier, J
    Kroll, U
    Bailat, J
    Droz, C
    Vallat-Sauvain, E
    Shah, A
    THIN SOLID FILMS, 2003, 427 (1-2) : 37 - 40
  • [50] Transport properties of microcrystalline silicon, prepared at high growth rate
    Kocka, J.
    Mates, T.
    Ledinsky, M.
    Stuchlíková, H.
    Stuchlik, J.
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (9-20) : 1097 - 1100
12345