High power density inverter utilizing SiC MOSFET and interstitial via hole PCB for motor drive system

被引：0

作者：

Sato I. ^{[1
]}

Tanaka T. ^{[1
]}

Hori M. ^{[1
]}

Yamada R. ^{[1
]}

Toba A. ^{[1
]}

Kubota H. ^{[2
]}

机构：

[1] Fuji Electric Co., Ltd., 1, Fuji-machi, Hino, Tokyo

[2] Meiji University, 1-1-1, Higashi-Mita, Tama-ku, Kawasaki, Kanagawa

来源：

IEEJ Transactions on Industry Applications | 2020年 / 140卷 / 07期

关键词：

High power density; Inverter; IVH; Motor drive; SiC MOSFET;

D O I：

10.1541/ieejias.140.526

中图分类号：

学科分类号：

摘要：

This paper proposes a high power density inverter utilizing SiC metal-oxide-semiconductor field-effect transistor (MOSFET) modules and an interstitial via hole (IVH) printed circuit board (PCB) for a motor drive system. The inverter also includes a power circuit, heatsink, cooling fan, gate drive circuit, and DC capacitors. The output power density of the proposed inverter is 81 kW/L. The inverter outputs 37 kW for motor drive applications. To achieve this superior output power density, this paper explains a prototype SiC MOSFET module without an antiparallel schottky barrier diode, and a unique multilayer laminate IVH PCB to connect the modules and DC capacitors. This paper describes the experimental results to verify the motor drive performance and the increase in temperature under the rated load operation. © 2020 The Institute of Electrical Engineers of Japan.

引用

页码：526 / 533

页数：7

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