Development of automatic voltage regulator for low voltage distribution systems

被引:0
|
作者
Research and Development Center, Tohoku Electric Power Co., Inc., 7-2-1, Nakayama, Aoba-ku, Sendai 981-0952, Japan [1 ]
不详 [2 ]
不详 [3 ]
不详 [4 ]
机构
来源
IEEJ Trans. Power Energy | / 5卷 / 436-444期
关键词
Compilation and indexing terms; Copyright 2025 Elsevier Inc;
D O I
暂无
中图分类号
学科分类号
摘要
Voltage control - Voltage distribution measurement - Solar energy
引用
收藏
相关论文
共 50 条
  • [41] Distributed Secondary Dc Voltage Control and Power Sharing of Multi-Terminal Dc Transmission Systems with Switching Topology
    Sun, Ji
    Chen, Xiangyong
    Xie, Xiangpeng
    Cao, Jinde
    Qiu, Jianlong
    SSRN,
  • [42] A low-voltage and high uniformity nano-electro-mechanical system tunable color filter based on subwavelength grating
    Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan
    不详
    不详
    Jpn. J. Appl. Phys., 11 PART2
  • [43] Measurement of radiated electromagnetic field due to low voltage ESD with spherical electrode in 1-3GHz frequency bandwidth
    Hachinohe Institute of Technology, 88-1, Ohbiraki, Myo, Hachinohe, Aomori 031-8501, Japan
    不详
    不详
    IEEJ Trans. Fundam. Mater., 5 (345-349+2):
  • [44] Development of a single capacitor-voltage-divider flux-loop for field-reversed theta-pinch plasmas
    Chen, Zhipeng
    Ye, Hui
    Zhao, Yangming
    Deng, Huapu
    Wang, WenShan
    Zhao, Yang
    Lin, Wang
    Xuan, Jingjing
    Rao, Bo
    Wang, Zhijiang
    Zhang, Ming
    REVIEW OF SCIENTIFIC INSTRUMENTS, 2021, 92 (10)
  • [45] Low-speed operation of a medium-voltage motor drive using a modular multilevel cascade inverter (MMCI-DSCC)
    Electrical Engineering, Tokyo Institute of Technology, 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
    IEEJ Trans. Ind Appl., 11 (1072-1079+8):
  • [46] Effects of homogeneous low voltage electron beam irradiation on adhesive strength of polycarbonate (PC) sheet covered with nylon6 film
    Department of Metallurgical Engineering, Graduate School of Engineering, Tokai University, Hiratsuka 259-1292, Japan
    不详
    Mater. Trans., 7 (1859-1863):
  • [47] AlGaN/GaN/AlGaN double heterostructures on silicon substrates for high breakdown voltage field-effect transistors with low on-resistance
    Interuniversity Microelectronics Center , Kapeldreef 75, B-3000, Leuven, Belgium
    不详
    不详
    Jpn. J. Appl. Phys., 4 PART 2
  • [48] FEM simulation-based development of a new tunable non-magnetic RF high voltage capacitor for the new generation of MRI
    Jebri, Zaineb
    Bord-Majek, Isabelle
    Bardet, Matthieu
    Ousten, Yves
    JOURNAL OF ENGINEERING-JOE, 2023, 2023 (01):
  • [49] Extremely low on-resistance and high breakdown voltage observed in Vertical GaN Schottky barrier diodes with high-mobility drift layers on low-dislocation-density GaN substrates
    Semiconductor Technologies R and D Laboratories, Sumitomo Electric Industries, Ltd., Itami, Hyogo 664-0016, Japan
    Appl. Phys. Express, 8
  • [50] Schottky source/drain InAlN/GaN metal-insulator-semiconductor high-electron-mobility transistor with high breakdown voltage and low on-resistance
    Zhou, Qi
    Chen, Hongwei
    Zhou, Chunhua
    Feng, Zhihong
    Cai, Shujun
    Chen, Kevin J.
    Japanese Journal of Applied Physics, 2012, 51 (4 PART 2):