Surface modification using highly charged Ions

被引：0
|
作者：
Sakurai M. [1 ]
Asakura K. [1 ]
Lida N. [1 ]
Liu S. [1 ]
Tona M. [1 ]
Terui T. [2 ]
机构：
[1] Kobe University, Nada-ku, Kobe 657-8501, 1-1, Rokkodai
[2] National Institute of Information and Communications Technology, Nishi-ku, Kobe 651-2492, 588-2, Iwaoka
来源：
IEEJ Transactions on Electronics, Information and Systems | 2010年 / 130卷 / 10期
关键词：
Highly charged ion; Potential sputtering; Surface modification;
D O I：
10.1541/ieejeiss.130.1730
中图分类号：
学科分类号：
摘要：
The surfaces of HOPG and Si(111) irradiated with highly charged ions (HCIs) were observed using a secondary electron microscope (SEM) and an atomic force microscope (AFM). The SEM contrast appears between irradiated and unirradiated surfaces when the fluence come to 1013-1014/cm 2, while the fluence of 1015-10l6/cm 2 is necessary for the irradiation with singly charged ions. The results exhibit that the potential energy of HCI produces surface modification efficiently without disturbing bulk structure. © 2010 The Institute of Electrical Engineers of Japan.
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页码：1730 / 1734+3
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