Vertical GaN Schottky barrier diodes with micrometer pillar Schottky contacts

被引：0

作者：

Zhu, Renqiang ^{[1
]}

Li, Bo ^{[2
]}

Li, Shuai ^{[2
]}

Ma, Zhengweng ^{[2
]}

Yang, Huakai ^{[2
]}

He, Shijie ^{[2
]}

Huang, Shuangwu ^{[2
]}

Xiong, Xinbo ^{[2
]}

Chiu, Hsien-Chin ^{[3
]}

Li, Xiaohua ^{[2
]}

Zhang, Bo ^{[1
,4
]}

Liu, Xinke ^{[2
]}

机构：

[1] Univ Elect Sci & Technol China, Shenzhen Inst Adv Study, Shenzhen, Peoples R China

[2] Shenzhen Univ, Coll Mat Sci & Engn, State Key Lab Radio Frequency Heterogeneous Integr, Shenzhen, Peoples R China

[3] Chang Gung Univ, Dept Elect Engn, Taoyuan 333, Taiwan

[4] Univ Elect Sci & Technol China, Sch Integrated Circuit Sci & Engn, Chengdu, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2025年 / 58卷 / 10期

关键词：

GaN-on-GaN; vertical devices; micrometer pillar; ultralow Ron; sp; ultra-low turn-on voltage; P-N DIODES;

D O I：

10.1088/1361-6463/ada391

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a novel design of gallium nitride (GaN) Schottky barrier diodes (SBDs) with a vertical micropillar structure. The micron-scale electrode design can effectively enhance the on-state current density and reduce the specific on-resistance (Ron,Sp). In addition, it allows for a reduction in the turn-on voltage (Von) by minimizing the spacing between the electrodes. This phenomenon can be explained by the intensified electric field coupling between the electrodes, as confirmed from the technology computer aided design simulations. By controlling the distance between the micron pillars, the Von of the SBD varies from approximately 0.35 V to 0.46 V. These results showcase the potential of our SBD design with micropillar contacts in efficient high-power applications.

引用

页数：5

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