Overview of candidate device technologies for storage-class memory

被引：0
|
作者：
Burr, Geoffrey W. [1 ]
Kurdi, Bülent N. [1 ]
Scott, J. Campbell [1 ]
Lam, Chung H. [2 ]
Gopalakrishnan, Kailash [1 ]
Shenoy, Rohit S. [1 ]
机构：
[1] IBM Almaden Research Center, 650 Harry Road, San Jose, CA 95120, United States
[2] IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598, United States
来源：
IBM Journal of Research and Development | 2008年 / 52卷 / 4-5期
关键词：
Silicon oxides - Phase change memory - Silicon compounds - Magnetic storage - Nonvolatile storage - Perovskite - Solid electrolytes;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
页码：449 / 464
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