Novel Ultrafast Transient Hot-Bridge Technique for Thermal Properties Measurement of Dielectric Thin Films

被引:1
|
作者
Belkerk, Boubakeur Essedik [1 ,2 ]
Achour, Amine [3 ]
Garnier, Bertrand [4 ]
Djouadi, Mohamed-Abdou [5 ]
机构
[1] Univ Constantine 1, Lab Microsyst & Instrumentat LMI, Constantine 25017, Algeria
[2] Univ Constantine 1, Fac Sci Technol, Constantine 25017, Algeria
[3] Pixium Vis SA, F-75012 Paris, France
[4] Nantes Univ, Lab Therm & Energie Nantes LTeN, CNRS, F-44306 Nantes, France
[5] Nantes Univ, Inst Mat Jean Rouxel IMN, F-44322 Nantes, France
基金
欧盟地平线“2020”;
关键词
Temperature measurement; Probes; Voltage measurement; Thermal conductivity; Resistance heating; Electrical resistance measurement; Resistance; Films; Conductivity; Electric variables measurement; Aluminum nitride (AlN); nanoscale and microscale thermal transport properties; sapphire; thermal conductivity; thin films; transient hot bridge (THB); Wheatstone bridge; CONDUCTIVITY MEASUREMENT; INSULATING SOLIDS; HEAT; THERMOREFLECTANCE; DIFFUSIVITY; RESISTANCE; TRANSPORT;
D O I
10.1109/TIM.2024.3470224
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This article introduces an ultrafast transient hot-bridge (THB) technique for the microscale measurement of thermal properties. The system comprises microfabricated heaters and resistance thermometers, arranged in a Wheatstone bridge configuration, deposited on sample surface. These components are used in order to generate and detect electrical pulses, leading to temperature increases on micro- and nanosecond scales. The design and performance of various probes are discussed, with an evaluation of their capabilities in terms of time response, precision, and resolution. Electrical pulses are applied via metalized probes, and the resultant temperature increases are analyzed within selected time periods ranging from 10 ns to 100 mu s. By ensuring a self-balanced condition for all Wheatstone bridges, the technique facilitates the detection of rapid, time-dependent changes in thermal properties due to temperature evolution or structural transformations. This innovative method enables the measurement of thermal conductivity in very thin films and demonstrates the potential for measuring thermal properties at micrometric or even nanometric scales.
引用
收藏
页数:9
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