Barrier inhomogeneity and electrical properties of PtGaN Schottky contacts

被引：0
|
作者：
Iucolano, Ferdinando [1 ,2 ]
Roccaforte, Fabrizio [1 ]
Giannazzo, Filippo [1 ]
Raineri, Vito [1 ]
机构：
[1] Istituto per la Microelettronica e Microsistemi (CNR-IMM), Consiglio Nazionale Delle Ricerche, Stradale Primosole 50, 95121 Catania, Italy
[2] Dipartimento di Fisica Ed Astronomia, Universit di Catania, Via S. Sofia 64, 95121 Catania, Italy
来源：
Journal of Applied Physics | 2007年 / 102卷 / 11期
关键词：
Schottky barrier diodes;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [31] ELECTRICAL-PROPERTIES OF PD/N-GASB SCHOTTKY CONTACTS
    SU, YK
    LI, NY
    JUANG, JS
    SOLID-STATE ELECTRONICS, 1991, 34 (04) : 426 - 428
  • [32] Modified approach to modeling barrier inhomogeneity in Schottky diodes
    Reddy, Pramod
    Kumar, Jitendra
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2019, 34 (03)
  • [33] Investigation on the barrier height and inhomogeneity of nickel silicide Schottky
    Huang, Shihua
    Lu, Fang
    APPLIED SURFACE SCIENCE, 2006, 252 (12) : 4027 - 4032
  • [34] Electrical properties of diamond platinum vertical Schottky barrier diodes
    Polyakov, Alexander
    Smirnov, Nikolay
    Tarelkin, Sergey
    Govorkov, Anatoliy
    Bormashov, Vitaly
    Kuznetsov, Mikhail
    Teteruk, Dmitry
    Buga, Sergey
    Kornilov, Nikolay
    Lee, In-Hwan
    MATERIALS TODAY-PROCEEDINGS, 2016, 3 : S159 - S164
  • [35] Electrical properties of Schottky barrier in MSM-diode structures
    Averine, S
    Chan, YC
    Lam, YL
    SIMC-XI: 2000 INTERNATIONAL SEMICONDUCTING AND INSULATING MATERIALS CONFERENCE, PROCEEDINGS, 2000, : 345 - 348
  • [36] Copper germanide Schottky barrier contacts to silicon
    Doyle, JP
    Svensson, BG
    Aboelfotoh, MO
    JOURNAL OF APPLIED PHYSICS, 1996, 80 (04) : 2530 - 2532
  • [37] ELECTROPHYSICAL PROPERTIES OF SCHOTTKY-BARRIER CONTACTS WITH HYDROGENATED AMORPHOUS-SILICON
    STRIKHA, VI
    ILCHENKO, VV
    MEZDROGINA, MM
    ANDREEV, AA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (03): : 280 - 281
  • [38] Effect of atomic hydrogen on the properties of metal-gaas schottky barrier contacts
    Bozhkov V.G.
    Kagadei V.A.
    Torkhov N.A.
    Russian Physics Journal, 1997, 40 (8) : 815 - 820
  • [39] INFLUENCE OF BARRIER INHOMOGENEITIES ON NOISE AT SCHOTTKY CONTACTS
    GUTTLER, HH
    WERNER, JH
    APPLIED PHYSICS LETTERS, 1990, 56 (12) : 1113 - 1115
  • [40] INP SCHOTTKY CONTACTS WITH INCREASED BARRIER HEIGHT
    WADA, O
    MAJERFELD, A
    ROBSON, PN
    SOLID-STATE ELECTRONICS, 1982, 25 (05) : 381 - 387
12345