Barrier inhomogeneity and electrical properties of PtGaN Schottky contacts

被引：0
|
作者：
Iucolano, Ferdinando [1 ,2 ]
Roccaforte, Fabrizio [1 ]
Giannazzo, Filippo [1 ]
Raineri, Vito [1 ]
机构：
[1] Istituto per la Microelettronica e Microsistemi (CNR-IMM), Consiglio Nazionale Delle Ricerche, Stradale Primosole 50, 95121 Catania, Italy
[2] Dipartimento di Fisica Ed Astronomia, Universit di Catania, Via S. Sofia 64, 95121 Catania, Italy
来源：
Journal of Applied Physics | 2007年 / 102卷 / 11期
关键词：
Schottky barrier diodes;
D O I：
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摘要：
Journal article (JA)
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