Spatially and temporally resolving the degradation of n-channel poly-Si thin-film transistors under hot-carrier stressing

被引：0
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作者：
Lee, Ming-Hsien [1 ]
Chang, Kai-Hsiang [1 ]
Lin, Horng-Chih [1 ,2 ]
机构：
[1] Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan
[2] National Nano Device Laboratories, Hsinchu 300, Taiwan
来源：
Journal of Applied Physics | 2007年 / 101卷 / 05期
关键词：
A test structure was proposed to investigate the spatial and temporal evolution of hot-carrier degradation in n -channel poly-Si thin-film transistors. Our experimental results clearly show that the initial damage during the early stage of hot-carrier stressing; which is still undetectable by conventional test structures; can be easily observed by the structure. In addition; the proposed test structure is also capable of resolving the evolution of the degradation along the channel; thus providing a powerful tool to study the location-dependent damage mechanisms. © 2007 American Institute of Physics;
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