Measurement and analysis of electronic properties of Hg1-xMnxTe wafers

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作者：
School of Material Science and Engineering, Northwestern Polytechnical University, Xi'an 710072, China [1 ]
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来源：
Gongneng Cailiao | 2006年 / 8卷 / 1232-1234+1238期
关键词：
Carrier concentration - Carrier mobility - Electronic properties;
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摘要：
Electronic properties of several Hg1-xMnxTe wafers are characterized by Van Der Pauw method at 77 K and room temperature respectively. It is found that the conductivity type of a part of Hg1-xMnxTe wafers change from p type at 77 K to n type at room temperature. The reasons are explained through theoretical analysis. The analysis shows that high ratio of electron to hole drift mobility and narrow forbidden band of Hg1-x MnxTe play key roles. Theoretical analysis of other electronic properties of Hg1-xMnxTe wafers shows that Van Der Pauw method does not suit to test carrier concentration and drift mobility of Hg1-xMnxTe wafers at room temperature, but it can be used to test resistivity and Hall coefficient.
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