Quantum-confined stark effects in a single GaN quantum dot

被引：1

作者：

State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China ^{[1
]}

机构：

[1] State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences

来源：

Chin. Phys. Lett. | 2008年 / 7卷 / 2628-2630期

关键词：

Nanocrystals;

D O I：

10.1088/0256-307X/25/7/081

中图分类号：

学科分类号：

摘要：

Using analytical expressions for the polarization field in GaN quantum dot, and an approximation by separating the potential into a radial and an axial, we investigate theoretically the quantum-confined Stark effects. The electron and hole energy levels and optical transition energies are calculated in the presence of an electric field in different directions. The results show that the electron and hole energy levels and the optical transition energies can cause redshifts for the lateral electric field and blueshifts for the vertical field. The rotational direction of electric field can also change the energy shift. © 2008 Chinese Physical Society and IOP Publishing Ltd.

引用

页码：2628 / 2630

页数：2

共 12 条

[1]

Yoffe A.D., Adv. Phys., 50, 1, (2001)

[2]

Berman G.P., Doolen G.D., Superlattices Microstructures, 27, 2-3, (2000)

[3]

Jarjour F., Al E., Phys. Rev. Lett., 99, 19, (2007)

[4]

Jarjoura F., Al E., Superlattices Microstructures, 6, (2007)

[5]

Robinson W., Al E., Appl. Phys. Lett., 86, 21, (2005)

[6]

Nakaoka T., Kako S., Arakawa Y., Phys. Rev., 73, 12, (2006)

[7]

Li S.S., Xia J.B., Appl. Phys. Lett., 87, 4, (2005)

[8]

Williams D.P., Andreev A.D., O'Reilly E.P., Phys. Rev., 73, 24, (2006)

[9]

Williams D.P., Al E., Phys. Rev., 72, 23, (2005)

[10]

Pearton S.J., Optoelectronic Properties of Semiconductors and Superlattices: GaN and Related Materials?, (2000)

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