Atomic-Scale Mechanism of Enhanced Electron-Phonon Coupling at the Interface of MgB2 Thin Films

被引:0
作者
Zhang, Xiaowen [1 ,5 ]
Xu, Tiequan [2 ,3 ]
Shi, Ruochen [1 ,5 ]
Han, Bo [1 ,5 ]
Liu, Fachen [4 ,5 ]
Liu, Zhetong [4 ,5 ]
Gao, Xiaoyue [1 ,5 ]
Du, Jinlong [5 ]
Wang, Yue [2 ,3 ]
Gao, Peng [1 ,4 ,5 ,6 ]
机构
[1] Peking Univ, Int Ctr Quantum Mat, Sch Phys, Beijing 100871, Peoples R China
[2] Peking Univ, Appl Superconduct Ctr, Beijing 100871, Peoples R China
[3] Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China
[4] Peking Univ, Acad Adv Interdisciplinary Studies, Beijing 100871, Peoples R China
[5] Peking Univ, Sch Phys, Electron Microscopy Lab, Beijing 100871, Peoples R China
[6] Hefei Natl Lab, Hefei 230088, Peoples R China
基金
中国国家自然科学基金; 国家重点研发计划;
关键词
interfacial phonon; interface effect; electron-phononcoupling; STEM-EELS; SUPERCONDUCTIVITY; MODES;
D O I
10.1021/acs.nanolett.4c03170
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
In conventional Bardeen-Cooper-Schrieffer (BCS) superconductors, electron-phonon coupling is the fundamental mechanism of superconductivity. For instance, the superconductivity of magnesium diboride (MgB2) comes from the coupling between E-2g modes (in-plane boron-boron bond vibrations) and self-doped charge carriers. In thin films and ceramics of BCS superconductors, interfaces with discontinuous chemical bonds may alter the local electron-phonon coupling. However, such effects remain largely unexplored. Here, we investigate the heterointerface of the MgB2 film on the SiC substrate at the atomic scale using electron microscopy and spectroscopy. We detect the presence of a thin MgO layer with a thickness of similar to 1 nm between MgB2 and SiC. Atomic-level electron energy loss spectra (EELS) show MgB2-E-2g mode splitting and softening near the MgB2/MgO interface, which enhances electron-phonon coupling at the interface. Our findings highlight the potential of interface engineering to enhance superconductivity via modulating local phonon states and/or electron states.
引用
收藏
页码:13200 / 13205
页数:6
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