Anodic bonding of silicon carbide to borosilicate glass

被引：1

作者：

Takahashi, Makoto ^{[1
]}

Aori, Yukiyasu ^{[2
,3
]}

Ikeuchi, Kenji ^{[1
]}

机构：

[1] Joining and Welding Research Institute, Osaka University

[2] Faculty of Engineering, Osaka University

来源：

Yosetsu Gakkai Ronbunshu/Quarterly Journal of the Japan Welding Society | 2009年 / 27卷 / 02期

关键词：

Anodic bonding; Borosilicate glass; Interfacial reaction; Joint strength; Microstructure; Silicon carbide;

D O I：

10.2207/qjjws.27.192s

中图分类号：

学科分类号：

摘要：

Joinability of silicon carbide to glass by anodic bonding was evaluated. Polycrystalline silicon carbide was successfully bonded to borosilicate glass Corning 7740. No crack by the residual stress occurred in all bonding conditions adopted in the present study. Increase in the bonding temperature enhanced progress of bonding, and the joint strength increased with the bonding temperature and the voltage application time. But the shear fracture stress of the joints did not exceed 6 MPa, and all the joints broken at the joint interface. Formation of a carbon-rich amorphous layer at the bond interface was observed by transmission electron microscopy. It was suggested that this layer caused relatively low joint strength of silicon carbide/glass anodically-bonded joint.

引用

页码：192s / 195s

页数：3

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