Exploration of the transverse seebeck effect in the inclined nitrogen-doped 4H-SiC thin film

被引:0
|
作者
Xie, Tian [1 ]
Tao, Bowan [1 ]
Zhao, Ruipeng [1 ]
Chen, Xi [1 ]
Li, Zhenzhe [1 ]
Zhao, Mingyuan [1 ]
Chen, Wenhao [1 ]
机构
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Device, Chengdu 611731, Peoples R China
关键词
4H-SiC thin film; ALTP; Heat flux sensor; Transverse Seebeck effect; 6H SILICON-CARBIDE; SENSORS; 4H;
D O I
10.1016/j.measurement.2024.116459
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The Transverse Seebeck Effect (TSE) in a 20 degrees inclined epitaxial nitrogen-doped 4H-SiC thin film was observed for the first time. When excited by a 248 nm pulsed laser with a 28 ns pulse duration, the nitrogen-doped 4H-SiC thin film demonstrated a short decay time of 10 ns, indicating its potential for high-speed heat flux detection. The thin film also shows good repeatability and linearity under a wide range of heat fluxes (61.9 kW/m2 to 5895.6 kW/ m2), revealing a sensitivity of 0.616 mu V/(kW/m2) and a maximum nonlinearity of +1.9 %. After a thermal process in the air at 800 degrees C for 30 min, the sensitivity slightly changes which shows good thermal tolerance. These findings underscore the inclined 4H-SiC thin film's promising capabilities for applications requiring fast response and the potential to monitor in extreme environmental conditions.
引用
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页数:6
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