Exploration of the transverse seebeck effect in the inclined nitrogen-doped 4H-SiC thin film

The Transverse Seebeck Effect (TSE) in a 20 degrees inclined epitaxial nitrogen-doped 4H-SiC thin film was observed for the first time. When excited by a 248 nm pulsed laser with a 28 ns pulse duration, the nitrogen-doped 4H-SiC thin film demonstrated a short decay time of 10 ns, indicating its potential for high-speed heat flux detection. The thin film also shows good repeatability and linearity under a wide range of heat fluxes (61.9 kW/m2 to 5895.6 kW/ m2), revealing a sensitivity of 0.616 mu V/(kW/m2) and a maximum nonlinearity of +1.9 %. After a thermal process in the air at 800 degrees C for 30 min, the sensitivity slightly changes which shows good thermal tolerance. These findings underscore the inclined 4H-SiC thin film's promising capabilities for applications requiring fast response and the potential to monitor in extreme environmental conditions.