Top-gate thin film transistor with ZnO:N channel fabricated by room temperature RF magnetron sputtering

被引：0
|
作者：
Zhang, Meng [1 ]
Zhou, Wei [1 ]
Chen, Rongsheng [1 ]
Wong, Man [1 ]
Kwok, Hoi-Sing [1 ]
机构：
[1] State Key Lab on Advanced Displays and Optoelectronics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
来源：
Digest of Technical Papers - SID International Symposium | 2014年 / 45卷 / 01期
关键词：
Thin film transistors;
D O I：
10.1002/j.2168-0159.2014.tb00266.x
中图分类号：
学科分类号：
摘要：
引用
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页码：1024 / 1027
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