Top-gate thin film transistor with ZnO:N channel fabricated by room temperature RF magnetron sputtering

被引：0

作者：

Zhang, Meng ^{[1
]}

Zhou, Wei ^{[1
]}

Chen, Rongsheng ^{[1
]}

Wong, Man ^{[1
]}

Kwok, Hoi-Sing ^{[1
]}

机构：

[1] State Key Lab on Advanced Displays and Optoelectronics, Hong Kong University of Science and Technology, Kowloon, Clear Water Bay

来源：

Digest of Technical Papers - SID International Symposium | 2014年 / 45卷 / 01期

关键词：

room temperature sputtering; thin film transistor; ZnO; ZnO:N;

D O I：

10.1002/j.2168-0159.2014.tb00266.x

中图分类号：

学科分类号：

摘要：

In this work, top-gate thin film transistor (TFT) with ZnO doped nitrogen (ZnO:N) channel fabricated by room temperature rf magnetron sputtering is demonstrated. ZnO:N film is obtained by introducing N2 ambient when sputtering ZnO. The crystallization of ZnO:N is better compared to ZnO film. The test results indicate that the ZnO:N could improve the electrical characteristics as an active channel layer for a TFT device. This in-process doping method may be a valuable technique for the fabrication of the practical and stable TFT devices. © 2014 Society for Information Display.

引用

页码：1024 / 1027

页数：3

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