Heading for brighter and faster β-Ga2O3 scintillator crystals

被引：11

作者：

Drozdowski W. ^{[1
]}

Makowski M. ^{[1
]}

Bachiri A. ^{[1
]}

Witkowski M.E. ^{[1
]}

Wojtowicz A.J. ^{[1
]}

Swiderski L. ^{[2
]}

Irmscher K. ^{[3
]}

Schewski R. ^{[3
]}

Galazka Z. ^{[3
]}

机构：

[1] Institute of Physics, Faculty of Physics, Astronomy and Informatics, Nicolaus Copernicus University in Toruń, ul. Grudziądzka 5, Toruń

[2] National Centre for Nuclear Research, ul. Andrzeja Sołtana 7, Otwock-Świerk

[3] Leibniz-Institut für Kristallzüchtung, Max-Born-Str. 2, Berlin

来源：

Optical Materials: X | 2022年 / 15卷

关键词：

Czochralski method; Free electron concentration; Scintillation time profile; Scintillation yield; β-Ga[!sub]2[!/sub]O[!sub]3[!/sub] crystal;

D O I：

10.1016/j.omx.2022.100157

中图分类号：

学科分类号：

摘要：

Czochralski-grown β-Ga2O3 and β-Ga2O3:Si crystals with the free electron concentrations between 2.5·1016 and 4.3·1018 cm−3 have been characterized by means of pulse height and scintillation time profile measurements in order to assess their basic scintillation properties. At room temperature, with increasing free electron concentration in the studied range, the scintillation yields decrease from 8920 to 1930 ph/MeV, while the mean scintillation decay times pare down from 989 to 61 ns. However, when the brightest β-Ga2O3 sample is cooled down below 100 K, its scintillation yield exceeds 20000 ph/MeV. © 2022 The Authors

引用

共 20 条

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