Ge epitaxy on Si: An enabling high-performance CMOS platform

被引：0

作者：

ASM America, Phoenix, AZ ^{[1
]}

不详 ^{[2
]}

机构：

来源：

Semicond Int | 2006年 / 11卷 / 67-70期

关键词：

Carrier concentration - CMOS integrated circuits - Electric conductivity - Electric insulators - Epitaxial growth - Hafnium compounds - Silicon - Silicon wafers;

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摘要：

The standard silicon epitaxy reactors are equipped with germanium to fabricate germanium on silicon (GOS) wafers in the strain engineering CMOS manufacturing technology. Layer transfer technology is used in high-performance manufacturing of Silicon on Insulator (SOI) wafers and are used to produce germanium on insulator (GOI) wafers when silicon wafers do not inhibit the targeted applications. The introduction of n-type and p-type conductivity is used in the fabrication of CMOS devices and high carrier concentration in achieved to activate dopant atoms and reduce implantation-induced defects. An automatically flat surface for an excellent CMOS device performance is provides high-quality gate oxides. The high-quality interface layer obtained by depositing HfO2by atomic layer deposition (ALD) method showed that the drive current for germanium PMOS transistor is higher than unstrained silicon made by selective epitaxy of SiGe.

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