Abnormal disturbance mechanism of sub-100 nm NAND flash memory

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作者：
F Device D1 Team, Flash Division, Hynix Semiconductor Inc., San 136-1 Ami-ri Bubal-eub, Ichon-si, Kyoungki-do 467-701, Korea, Republic of [1 ]
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来源：
Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap | / 8 A卷 / 6210-6215期
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Abnormal disturbance mechanism - Gate induced drain leakage (GIDL) - Program disturbance - Source select line (SSL);
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