Atomic intermixing and interface roughness in short-period InAs/GaSb superlattices for infrared photodetectors

被引：5

作者：

Ashuach, Y. ^{[1
]}

Lakin, E. ^{[1
]}

Saguy, C. ^{[2
]}

Kaufmann, Y. ^{[1
]}

Zolotoyabko, E. ^{[1
,2
]}

机构：

[1] Technion Israel Inst Technol, Dept Mat Sci & Engn, IL-32000 Haifa, Israel

[2] Technion Israel Inst Technol, Inst Solid State, IL-32000 Haifa, Israel

来源：

JOURNAL OF APPLIED PHYSICS | 2014年 / 116卷 / 12期

关键词：

MOLECULAR-BEAM EPITAXY; DETECTORS; HETEROSTRUCTURES; SEGREGATION; MICROSCOPY;

D O I：

10.1063/1.4896834

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A set of advanced characterization methods, including high-resolution X-ray diffraction (measurements and simulations), cross-sectional scanning tunneling microscopy, and high-angle annular dark-field scanning transmission electron microscopy is applied to quantify the interface roughness and atomic intermixing (in both cation and anion sub-lattices) in short period (6-7 nm) InAs/GaSb superlattices intended for mid-wavelength (M) and long-wavelength (L) infrared detectors. The undesired atomic intermixing and interface roughness in the L-samples were found to be considerably lower than in the M-samples. In all specimens, anion intermixing is much higher than that in the cation sub-lattice. Possible origins of these findings are discussed. (C) 2014 AIP Publishing LLC.

引用

页数：7