Radiative transitions in irradiated MgAl2O4 spinel crystal

被引:0
作者
Museur, L. [1 ]
Feldbach, E. [2 ]
Smortsova, Y. [3 ]
Kotlov, A. [3 ]
Kanaev, A. [4 ]
机构
[1] Univ Sorbonne Paris Nord, Lab Phys Lasers LPL, CNRS, UMR 7538, F-93430 Villetaneuse, France
[2] Univ Tartu, Inst Phys, W Ostwald Str 1, EE-50411 Tartu, Estonia
[3] DESY, Photon Sci, Notkestr 85, D-22607 Hamburg, Germany
[4] Univ Sorbonne Paris Nord, Lab Sci Procedes MatLSPM, CNRS, UPR 3407, F-93430 Villetaneuse, France
关键词
MgAl; 2; O; 4; spinel; Radiation tolerance; Electronic defect structure; He plus ions irradiation; Time; and energy-resolved luminescence; TUNNELING RECOMBINATION; LUMINESCENCE; PHOSPHORS; MOTION;
D O I
10.1016/j.jlumin.2024.121029
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Radiative transitions in MgAl2O4 spinel single crystal were investigated after irradiation with He+ ions of fluence similar to 10(17) particles/cm(2). Photoluminescence (PL), PL excitation spectra and PL decay curves were measured at cryogenic temperatures of 8 K. It is shown that PL decay kinetics of 5 eV (250 nm) and 3 eV (420 nm) bands are similar because of the common excited state. Furthermore, after irradiation PL band at similar to 5 eV preserved characteristic behaviour of the donor-acceptor pair transitions. The PL channels involve electronic transitions of antisite defects, Mg-Al (shallow acceptor) and Al-Mg (shallow donor), and oxygen vacancy V-O (deep donor), while Al-Mg served an intermediate of the electronic excitation channel. The intense emissions were assigned to V-O(center dot)& lowast; -> V-O(center dot) (3 eV) and V-O(center dot)& lowast; -> Mg-Al(x) (5 eV), which involve respectively energy and energy-electron transfer. Participation of the doubly-ionized oxygen vacancy V-O(center dot center dot) in the energy/electron transfer is suggested. The obtained data enabled a generalised scheme of electronic transitions in MgAl2O4 spinel in presence of intrinsic defects.
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页数:5
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