Electro-Thermal Co-Design β-Ga2O3 MOS-Type Trench Diode Based on Optimized Trench-Sidewall Interface Quality Strategy and Mechanism Study

Currently, the published beta-Ga2O3 MOS-Type trench diodes all use [010] trench sidewall with low thermal conductivity ( kT[100] ) but rarely [100] trench sidewall with high thermal conductivity ( kT[010] ). Because side-wall-orientation-dependent etch damage increases gradually with the increase of trench angle [010] trench as 0 degrees rotation). For the first time, the optimized sidewall interface quality (OSIQ) strategy based on the ferroelectric material of PZT is applied to beta-Ga2O3 trench diode (PSTD) to improve the trench sidewall interface quality for all trench-angle devices, which has verified OSIQ and its related electro-thermal optimization. The increasing trend of current density with different pre-voltage stress and pre-voltage stress time of PSTD are exhaustively investigated, and the [100] one shows a more improved and advantageous current rate compared to [010] one with the same chip size after the stress. Further, the mechanism of the proposed OSIQ has been revealed. This work can aid in the comprehensive improvement of the electro-thermal performance of the beta-Ga2O3 trench device.