Organic thin-film transistors with tailored liquid sources of High-μ HfO2 using excimer laser irradiation

被引：0

作者：

Nishizawa, Ryota ^{[1
]}

Naka, Shigeki ^{[1
]}

Okada, Hiroyuki ^{[1
]}

Suzuki, Kazuyuki ^{[2
]}

Kato, Kazumi ^{[2
]}

机构：

[1] Graduate School of Science and Engineering, University of Toyama, Toyama 930-8555, Japan

[2] National Institute of Advanced Industrial Science and Technology (AIST), Nagoya 463-856, Japan

来源：

关键词：

Compendex;

D O I：

01BC02

中图分类号：

学科分类号：

摘要：

Thin films

引用

共 4 条

[1] Optimization of the fabrication process for ZnO thin-film transistors with HfO2 gate dielectrics
Chen, Henry J. H.
Yeh, Barry B. L.
Japanese Journal of Applied Physics, 2009, 48 (03):
[2] Impact of high-k HfO2 dielectric on the low-frequency noise behaviors in amorphous ingazno thin film transistors
Semiconductor Laboratory, Samsung Advanced Institute of Technology, Yongin, Gyeonggi 446-712, Korea, Republic of
不详
不详
不详
Jpn. J. Appl. Phys., 10 (1002051-1002053):
[3] Charge injection in high-κ gate dielectrics of single-walled carbon nanotube thin-film transistors
Sotera Defense Solutions, Crofton, MD 21114, United States
不详
ACS Nano, 6 (5040-5050):
[4] N-Channel organic thin-film transistors based on naphthalene- bis(dicarboximide) polymer for organic transistor memory using hole-acceptor layer
Mohamad, Khairul Anuar
Yousuke, Kakuta
Uesugi, Katsuhiro
Fukuda, Hisashi
Japanese Journal of Applied Physics, 2011, 50 (9 PART 1):