Growth of thick Ge epitaxial layers with low dislocation density on silicon substrate by UHV/CVD

被引：0
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作者：
Zhou, Zhiwen [1 ]
Cai, Zhimeng [1 ]
Zhang, Yong [1 ]
Cai, Kunhuang [1 ]
Zhou, Bi [1 ]
Lin, Guijiang [1 ]
Wang, Jianyuan [1 ]
Li, Cheng [1 ]
Lai, Hongkai [1 ]
Chen, Songyan [1 ]
Yu, Jinzhong [2 ]
Wang, Qiming [2 ]
机构：
[1] Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen 361005, China
[2] State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Acad. of Sci., Beijing 100083, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2008年 / 29卷 / 02期
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页码：315 / 318
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