Growth of thick Ge epitaxial layers with low dislocation density on silicon substrate by UHV/CVD

被引：0

作者：

Zhou, Zhiwen ^{[1
]}

Cai, Zhimeng ^{[1
]}

Zhang, Yong ^{[1
]}

Cai, Kunhuang ^{[1
]}

Zhou, Bi ^{[1
]}

Lin, Guijiang ^{[1
]}

Wang, Jianyuan ^{[1
]}

Li, Cheng ^{[1
]}

Lai, Hongkai ^{[1
]}

Chen, Songyan ^{[1
]}

Yu, Jinzhong ^{[2
]}

Wang, Qiming ^{[2
]}

机构：

[1] Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen 361005, China

[2] State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Acad. of Sci., Beijing 100083, China

来源：

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2008年 / 29卷 / 02期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：315 / 318

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