Growth of thick Ge epitaxial layers with low dislocation density on silicon substrate by UHV/CVD

被引：0
|
作者：
Zhou, Zhiwen [1 ]
Cai, Zhimeng [1 ]
Zhang, Yong [1 ]
Cai, Kunhuang [1 ]
Zhou, Bi [1 ]
Lin, Guijiang [1 ]
Wang, Jianyuan [1 ]
Li, Cheng [1 ]
Lai, Hongkai [1 ]
Chen, Songyan [1 ]
Yu, Jinzhong [2 ]
Wang, Qiming [2 ]
机构：
[1] Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen 361005, China
[2] State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Acad. of Sci., Beijing 100083, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2008年 / 29卷 / 02期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：315 / 318
相关论文
共 50 条
  • [1] Epitaxial growth of thick Ge layers with low dislocation density on silicon substrate by UHV/CVD
    Chen Cheng-Zhao
    Zheng Yuan-Yu
    Huang Shi-Hao
    Li Cheng
    Lai Hong-Kai
    Chen Song-Yan
    ACTA PHYSICA SINICA, 2012, 61 (07)
  • [2] Growth of near planar Si0.5Ge0.5 epitaxial layers directly on Si substrate by UHV/CVD at 500°C
    Zhao, Lei
    Zuo, Yu-Hua
    Li, Chuan-Bo
    Cheng, Bu-Wen
    Luo, Li-Ping
    Yu, Jin-Zhong
    Wang, Qi-Ming
    Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices, 2006, 12 (01): : 5 - 9
  • [3] Growth of low basal plane dislocation density SiC epitaxial layers
    Zhang, Z.
    Sudarshan, T. S.
    SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 243 - +
  • [4] UHV/CVD Si epitaxial growth on double layer porous silicon
    Wang, Jin
    Huang, Jingyun
    Huang, Yiping
    Li, Aizhen
    Bao, Zongming
    Zhu, Shiyang
    Ye, Zhizhen
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2000, 21 (10): : 979 - 983
  • [5] INCORPORATION OF BORON INTO UHV/CVD-GROWN GERMANIUM-SILICON EPITAXIAL LAYERS
    GREVE, DW
    RACANELLI, M
    JOURNAL OF ELECTRONIC MATERIALS, 1992, 21 (06) : 593 - 597
  • [6] Ge assisted SiC epitaxial growth by CVD on SiC substrate
    Alassaad, Kassem
    Souliere, Veronique
    Doisneau, Beatrice
    Cauwet, Francois
    Peyre, Herve
    Carole, Davy
    Chaussende, Didier
    Ferro, Gabriel
    SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 187 - +
  • [7] Ge assisted SiC epitaxial growth by CVD on SiC substrate
    20141217488031
    (1) Université Claude Bernard Lyon 1, CNRS, UMR 5615, Laboratoire des Multimatériaux et Interfaces, 43 Bd du 11 Nov. 1918, 69622 Villeurbanne, France; (2) LMGP, UMR CNRS 5628, Grenoble INP, Minatec, 3 parvis Louis Néel, 38016 Grenoble, France; (3) Laboratoire Charles Coulomb, UMR CNRS 5221 Université Montpellier, France, 1600, Cree Inc.; et al; Mitsubishi Electric Corporation; Research Institute for Applied Sciences; The Japan Society of Applied Physics; Tokyo Electron Limited (Trans Tech Publications Ltd): : 778 - 780
  • [8] Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions
    Xie, Changjiang
    Li, Yue
    Xu, Chi
    Wang, Yixin
    Cong, Hui
    Xue, Chunlai
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2024, 39 (01)
  • [9] Segregation of interface carbon during silicon epitaxial growth by UHV-CVD
    Aoyama, T
    Suzuki, T
    Arai, K
    Tatsumi, T
    JOURNAL OF CRYSTAL GROWTH, 1995, 157 (1-4) : 323 - 326
  • [10] Thick GaN epitaxial growth with low dislocation density by hydride vapor phase epitaxy
    Usui, A
    Sunakawa, H
    Sakai, A
    Yamaguchi, AA
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1997, 36 (7B): : L899 - L902
12345