High-temperature operation of normally off-mode AlGaN/GaN heterostructure field-effect transistors with p-GaN gate

被引：0

作者：

Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan ^{[1
]}

不详 ^{[2
]}

机构：

来源：

Jpn. J. Appl. Phys. | / 1 PART 2卷

关键词：

Compendex;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Gallium nitride

引用

收藏

相关论文

共 2 条

[1] Enhancement-mode insulating-gate AlInN/AlN/GaN heterostructure field-effect transistors with threshold voltage in excess of +1.5V
Nitek Inc., Salem Church Road, Irmo, SC 29063, United States
不详
Appl. Phys. Express, 11
[2] High mobility SiGe p-channel metal-oxide-semiconductor field-effect transistors epitaxially grown on Si(100) substrates with HfSiO2 high-k dielectric and metal gate
SEMATECH, 2706 Montopolis Drive, Austin, TX 78741, United States
不详
不详
Jpn. J. Appl. Phys., 1600, 4 PART 2