Optical characterization of CuInSe2 thin films grown by metal organic chemical vapor deposition

被引：0
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作者：
Ko, Cheng-Hao [1 ,4 ]
Chen, Chang-Tai [1 ,4 ]
Yang, Ming-Der [2 ]
Hu, Che-Hao [2 ]
Liu, Yu-Kai [2 ]
Wang, Jyh-Shyang [2 ]
Shen, Ji-Lin [2 ]
Yang, Tsun-Neng [3 ]
Lan, Shan-Ming [3 ]
Lin, Jian-Shian [4 ]
机构：
[1] Department of Electrical Engineering, Yuan-Zi University, Chungli 320, Taiwan
[2] Physics Department, Chung Yuan Christian University, Chungli 320, Taiwan
[3] Institute of Nuclear Energy Research, P.O. Box 3-11, Lungtan 32500, Taiwan
[4] Advanced Manufacturing Core Technology Division, Mechanical and System Research Laboratories, Industrial Technology Research Institute, Chu-Tung 31040, Taiwan
来源：
Japanese Journal of Applied Physics | 2008年 / 47卷 / 9 PART 1期
关键词：
We studied the photoluminescence (PL) in CuInSe2 thin films grown by metal organic chemical vapor deposition (MOCVD) using a Cu precursor and two gases. By X-ray diffraction (XRD) and PL analysis; we found that the best quality of CuInSe2 thin films can be obtained when the deposition time of the trimethylindium (TMI) gas is 30 min. The improvement of the quality of CuInSe2 thin films after rapid thermal annealing (RTA) is evident from the full width at half maximum (FWHM) of PL. The FWHM of the PL peak is minimum when the RTA temperature is 500C. It is found the binding energy of the impurity level in CuInSe2 thin films increases after RTA; revealing that the thermal stability of CuInSe2 thin films is improved after RTA. © 2008 The Japan Society of Applied Physics;
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页码：7044 / 7046
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