Influences of quantum noises on direct-modulated properties of 1.3-μm InGaAsP/InP laser diodes

被引：0

作者：

National Engineering Research Center for Opto-electronic Device, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China ^{[1
]}

不详 ^{[2
]}

不详 ^{[3
]}

机构：

[1] National Engineering Research Center for Opto-electronic Device, Institute of Semiconductors, Chinese Academy of Sciences

[2] Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences

[3] Department of Physics, Huazhong University of Science and Technology

来源：

Chin. Phys. | 2006年 / 9卷 / 2125-2129期

关键词：

Carrier noise; InGaAsP/InP laser diodes; Linear approximation method; Photon noise;

D O I：

10.1088/1009-1963/15/9/037

中图分类号：

学科分类号：

摘要：

Due to the zero dispersion point at 1.3μm in optical fibres, 1.3-μm InGaAsP/InP laser diodes have become main light sources in fibre communication systems recently. Influences of quantum noises on direct-modulated properties of single-mode 1.3-μm InGaAsP/InP laser diodes are investigated in this article. Considering the carrier and photon noises and the cross-correlation between the two noises, the power spectrum of the photon density and the signal-to-noise ratio (SNR) of the direct-modulated single-mode laser system are calculated using the linear approximation method. We find that the stochastic resonance (SR) always appears in the dependence of the SNR on the bias current density, and is strongly affected by the cross-correlation coefficient between the carrier and photon noises, the frequency of modulation signal, and the photon lifetime in the laser cavity. Hence, it is promising to use the SR mechanism to enhance the SNR of direct-modulated InGaAsP/InP laser diodes and improve the quality of optical fibre communication systems. © 2006 Chin. Phys. Soc. and IOP Publishing Ltd.

引用

页码：2125 / 2129

页数：4