A leakage current-compensation-mode sense amplifier for high-performance SRAM

被引：0

作者：

Na, Bai ^{[1
,2
]}

Zheng, Zhongjiu ^{[3
,4
]}

Wu, Xiulong ^{[1
]}

机构：

[1] School of Electronics and Information Engineering, Anhui University

[2] National Mobile Communication Research Laboratory, Southeast University

[3] College of Electrical Engineering, Dalian University of Technology

来源：

International Journal of Advancements in Computing Technology | 2012年 / 4卷 / 23期

关键词：

Leakage current; Sense amplifier; SRAM;

D O I：

10.4156/ijact.vol4.issue23.87

中图分类号：

学科分类号：

摘要：

As the semiconductor technology progresses, transistor's leakage current increases significantly, which cause SRAM performance degraded dramatically. Current sense amplifier (SA) always achieves higher performance than the traditional voltage-type counterworker. Therefore, a new current-mode sense amplifier combined with leakage current compensation circuit for high-performance SRAM is proposed in this paper. Simulation results demonstrate that, compared to the traditional design, the delay can be reduced by 42.9%.

引用

页码：729 / 735

页数：6

共 11 条

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