6,13-bis(triisopropylsilylethynyl) pentacene organic field-effect transistors utilizing poly(p-silsesquioxane) insulating layers with various ratios of phenol groups

被引：0
|
作者：
Nakanishi, Yuta [1 ]
Kajii, Hirotake [1 ]
Tamura, Koki [2 ]
Ohmori, Yutaka [1 ]
机构：
[1] Graduate School of Engineering, Osaka University, Osaka 565-0871, Japan
[2] Tokyo Ohka Kogyo Co., Ltd., Samukawa, Kanagawa 253-0114, Japan
来源：
Japanese Journal of Applied Physics | 2012年 / 51卷 / 4 PART 2期
关键词：
Bottom contacts - High field effect mobility - Hydroxyl groups - Insulating layers - Operating voltage - Polymer gate insulator - Silsesquioxanes - Transfer characteristics;
D O I：
04DK03
中图分类号：
学科分类号：
摘要：
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