Atomic-level investigation for surface characteristics in a Co-Cu multilayer system: Molecular dynamics simulation

被引：4

作者：

Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Korea, Republic of ^{[1
]}

机构：

[1] Division of Materials Science and Engineering, Hanyang University

来源：

IEEE Trans Magn | 2008年 / 11 PART 2卷 / 2903-2906期

关键词：

Co/Cu multilayer system; Growth morphology; Molecular dynamics simulation; Thin films;

D O I：

10.1109/TMAG.2008.2001520

中图分类号：

学科分类号：

摘要：

Using molecular dynamics simulation, the growth behavior of Co atoms on Cu substrates for two different crystallographic orientations, (001) and (111), was extensively investigated. The surface roughness became noticeably higher during 20-monolayer (ML) deposition of Co thin-film on the Cu(111) substrate compared to the case of the Cu(001) substrate. It was found that the high diffusivity of Co adatoms on Cu(111) enhanced the atomic lateral movement, and the deposited Co adatoms could be agglomerated easily. The different growth behavior could be successfully explained in terms of the lateral atomic displacement and local acceleration energy. © 2008 IEEE.

引用

页码：2903 / 2906

页数：3

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