Enhancing energy storage with binder-free nickel oxide cathodes in flexible hybrid asymmetric solid-state supercapacitors

被引:8
作者
Kumbhar, Maruti B. [1 ]
V. Patil, Vinod [2 ]
Chandak, Vaishali S. [1 ]
Gunjakar, Jayavant L. [3 ]
Kulal, Prakash M. [4 ]
机构
[1] Dayanand Sci Coll, Thin Films & Mat Sci Res Lab, Latur 413515, Maharashtra, India
[2] Punyashlok Ahilyadevi Holkar Solapur Univ, Sch Chem Sci, Solapur 413255, India
[3] D Y Patil Educ Soc, Ctr Interdisciplinary Res CIR, Kolhapur 416006, India
[4] Shivaji Mahavidyalaya, Renapur 413527, Maharashtra, India
关键词
Nickel oxide; Flexible hybrid asymmetric supercapacitor; SILAR; Thin film; CARBON NANOTUBES; PARTICLE-SIZE; THIN-FILM; PERFORMANCE; ELECTRODE; NANOSHEETS; FABRICATION; NANOFLAKES; STABILITY; DESIGN;
D O I
10.1016/j.jallcom.2024.177311
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The need for flexible electrode materials for the development of flexible supercapacitors has drawn scientific interest recently. We present the successful synthesis of nickel oxide thin films using the successive ionic layer adsorption and reaction (SILAR) method, with the use of three different cationic precursors. This paper provides comprehensive details on the synthesized nickel oxide structure, morphology, and elemental analysis in addition to its electrochemical characteristics, which include specific capacitance (SCs), charge transfer resistance, etc. The produced nickel oxide electrodes achieved specific capacity as 120 C g- 1, 517 C g- 1, and 1147 C g- 1 with different nickel precursors such as nickel chloride, nickel nitrate, and nickel sulfate respectively, at a 1 mA cm- 2 current density. A flexible hybrid asymmetric solid-state supercapacitor (FHASS) (S:NiO//PVA-KOH//CuS) device delivered SCs of 165 Fg- 1 at a 0.5 mA cm- 2 current density, with a maximum SE of 58.87 Wh kg- 1 at SP 347 W kg- 1. FHASS device exhibits capacitive retention and coulombic efficiency of between 79 % and 96 % after 5000 successful GCD cycles. Also, the device retained an outstanding 97 % of its capacitance at a 175 degrees bending angle. Furthermore, to illustrate its real-world applicability, the constructed device underwent 30 s of charging to a lightning LED table lamp for 90 s. The fabricated device is bringing a new era of broad integration of device-grade applications.
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页数:15
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