Design, fabrication, and analysis of a resonant tunneling diode

被引：0
|
作者：
Zhang, Lei [1 ]
Yang, Ruixia [1 ]
Wu, Yibin [2 ]
Shang, Yaohui [2 ]
Gao, Jinhuan [1 ]
机构：
[1] Hebei University of Technology, Tianjin 300130, China
[2] The 13th Research Institute, China Electronics Technology Group Corporation, Shijiazhuang 050051, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2007年 / 28卷 / 05期
关键词：
Semiconductor diodes;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：737 / 740
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