InAs-coverage dependence of self-assembled quantum dot size, composition, and density

被引：15

作者：

Institut für Experimentalphysik, Hamburg University, D-22761, Hamburg, Germany ^{[1
]}

不详 ^{[2
]}

机构：

[1] Institut für Experimentalphysik, Hamburg University, D-22761, Hamburg

[2] Institut für Angewandte Physik, Hamburg University, D-20355, Hamburg

来源：

Appl Phys Lett | 2007年 / 8卷

关键词：

16;

D O I：

10.1063/1.2772758

中图分类号：

学科分类号：

摘要：

The authors report about the x-ray investigation of InAsGaAs (001) quantum dot systems grown with varying amount of deposited InAs. It is shown that the intermixing induced composition of investigated quantum dots remains constant within the whole probed InAs deposition region. It is found that the increase of deposited InAs entirely leads to a proportional increase of surface density of dots and does not significantly influence the dot size. The dot average chemical composition was quantitatively estimated by comparison to finite-element based calculations. © 2007 American Institute of Physics.

引用

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