Growth conditions, structure, Raman characterization and optical properties of Sm-doped (Lu xGd 1-x) 2SiO 5 single crystals grown by the Czochralski method

被引：22

作者：

机构：

[1] Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw

[2] Institute of Low Temperature and Structure Research, Polish Academy of Sciences, 50-950 WrocŁaw

[3] Faculty of Technical Physics, Poznan University of Technology, 60-965 Poznan

[4] Institute of Electronic Materials Technology, 01-919 Warsaw

来源：

G&lstrok;owacki, M. (glowacki@ifpan.edu.pl) | 1600年 / Academic Press Inc.卷 / 186期

关键词：

Optical studies; Raman; Rare-earth orthosilicates solid solution; Single crystal structure; X-ray powder diffraction;

D O I：

10.1016/j.jssc.2011.12.021

中图分类号：

学科分类号：

摘要：

The (Lu xGd 0.995-xSm 0.005) 2SiO 5 single crystals with x=0.095, 0.11, 0.15, 0.17, 0.19 0.35 and 0.5 were grown by the Czochralski method. Structural properties were investigated by X-ray diffraction measurements. Unit cell parameters and cell volume were determined by the Rietveld refinement of the collected X-ray powder spectra. The segregation features between Gd and Lu were estimated and analyzed. Vibrational properties of the solid solutions were analyzed on the basis of polarized Raman spectra acquired at 300875 K temperature range. Absorption and emission spectra of Sm 3 ion in the crystals with different composition were analyzed in the terms of dopant energy levels, oscillator strengths of transitions and spectral features of luminescence bands in the visible range. Both structural and optical investigations revealed that change of Lu 3 content in (Lu xGd 0.995-xSm 0.005) 2SiO 5 solid solution crystals induces the phase transition from C2/c (Lu 2SiO 5) to P2 1/c (Gd 2SiO 5) structure. It was found that the break of LSO to GSO-type structure occurs at 0.15<x<0.17. © 2011 Elsevier Inc.

引用

页码：268 / 277

页数：9