Charge injection and polarization fatigue in ferroelectric thin films

被引：0
|
作者：
Jiang, A.Q. [1 ]
Lin, Y.Y. [1 ]
Tang, T.A. [1 ]
机构：
[1] ASIC and System State Key Laboratory, Department of Microelectronics, Fudan University, Shanghai 200433, China
来源：
Journal of Applied Physics | 2007年 / 102卷 / 07期
关键词：
Typical experimental data of polarization fatigue in Pb (Zr; Ti) O3 thin films have been presented: (1) The coercive voltage Vc and the shape of the polarization-electric (P-E) hysteresis loop unnecessarily change with the number N of fatigue cycles except the remanent polarization; (2) the capacitance at voltages close to Vc decreases monotonically with increased N; in comparison with its enhancement at voltages far away from Vc; (3) electrode damage occurs after the appearance of the amount of pinned domain walls; and (4) domain-wall pinning and depinning coexist during fatigue cycling. All phenomena mentioned above are interpreted in terms of charge injection into regions with the inhomogeneities of dielectric constant; conductivity; and polarization; especially near film-electrode interfaces. Pinning and depinning coefficients of domain walls are extracted from fatigue profiles and found to be useful in the prediction of charge injection depending on the fatigue voltage and frequency. Domain-wall motion impeded by screening carriers within film thickness is suggested during fatigue through the mimic of two in-series ferroelectric capacitors with different polarizations. © 2007 American Institute of Physics;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [21] Polarization reversal due to charge injection in ferroelectric films -: art. no. 214120
    Bühlmann, S
    Colla, E
    Muralt, P
    PHYSICAL REVIEW B, 2005, 72 (21)
  • [22] Mechanisms for Polarization Fatigue Behaviors of Perovskite Oxide Ferroelectric Thin Films附视频
    LIU J M Department of Physics and National Laboratory of Solid State Microstructures Nanjing University Nanjing China
    四川大学学报(自然科学版), 2005, (自然科学版)
  • [23] RELAXATIONAL POLARIZATION AND CHARGE INJECTION IN THIN-FILMS OF SILICON-NITRIDE
    HOMANN, M
    KLIEM, H
    MICROELECTRONICS JOURNAL, 1994, 25 (07) : 559 - 566
  • [24] Multilevel polarization switching in ferroelectric thin films
    Martin F. Sarott
    Marta D. Rossell
    Manfred Fiebig
    Morgan Trassin
    Nature Communications, 13
  • [25] Mechanisms of polarization switching in ferroelectric thin films
    EPFL, Lausanne, Switzerland
    Ferroelectrics, 1600, 1 -4 pt 2 (79-88):
  • [26] Multilevel polarization switching in ferroelectric thin films
    Sarott, Martin F.
    Rossell, Marta D.
    Fiebig, Manfred
    Trassin, Morgan
    NATURE COMMUNICATIONS, 2022, 13 (01)
  • [27] GHZ polarization dynamics in ferroelectric thin films
    Hubert, Charles
    Levy, Jeremy
    Cukauskas, Ed
    Kirchoefer, Stephen W.
    Integrated Ferroelectrics, 2000, 28 (1-4) : 227 - 236
  • [28] Simulation of the polarization switching in thin ferroelectric films
    Maksimov, A., V
    Baruzdina, O. S.
    Maksimova, O. G.
    Egorov, V., I
    Baidganov, A. R.
    8TH INTERNATIONAL CONFERENCE ON MATHEMATICAL MODELING IN PHYSICAL SCIENCE, 2019, 1391
  • [29] Flexosensitive polarization vortices in thin ferroelectric films
    Morozovska, Anna N.
    Eliseev, Eugene A.
    Kalinin, Sergei V.
    Hertel, Riccardo
    PHYSICAL REVIEW B, 2021, 104 (08)
  • [30] Flexoelectric rotation of polarization in ferroelectric thin films
    G. Catalan
    A. Lubk
    A. H. G. Vlooswijk
    E. Snoeck
    C. Magen
    A. Janssens
    G. Rispens
    G. Rijnders
    D. H. A. Blank
    B. Noheda
    Nature Materials, 2011, 10 : 963 - 967
12345