Study of the annealing kinetic effect and implantation energy on phosphorus-implanted silicon wafers using spectroscopic ellipsometry

被引:0
|
作者
Lioudakis, Emmanouil [1 ]
Christofides, Constantinos [1 ]
Othonos, Andreas [1 ]
机构
[1] Photonics and Optoelectronics Research Laboratory, Department of Physics, University of Cyprus, P.O. Box 20537, 1678 Nicosia, Cyprus
来源
Journal of Applied Physics | 2006年 / 99卷 / 12期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [21] ELECTRON IRRADIATION-ACTIVATED LOW-TEMPERATURE ANNEALING OF PHOSPHORUS-IMPLANTED SILICON
    MIYAO, M
    POLMAN, A
    SINKE, W
    SARIS, FW
    VANKEMP, R
    APPLIED PHYSICS LETTERS, 1986, 48 (17) : 1132 - 1134
  • [22] Spectroscopic ellipsometry study of ion-implanted Si(100) wafers
    1600, American Institute of Physics Inc. (91):
  • [23] Spectroscopic ellipsometry study of ion-implanted Si(100) wafers
    Tsunoda, K
    Adachi, S
    Takahashi, M
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (05) : 2936 - 2941
  • [24] ELECTRON-PARAMAGNETIC RESONANCE STUDY ON ANNEALING OF PHOSPHORUS-IMPLANTED CADMIUM TELLURIDE
    HSU, YJ
    HWANG, HL
    JOURNAL OF APPLIED PHYSICS, 1989, 65 (11) : 4212 - 4214
  • [25] IR variable angle spectroscopic ellipsometry study of high dose ion-implanted and annealed silicon wafers
    Liu, Xianming
    Li, Bincheng
    JOURNAL OF APPLIED PHYSICS, 2009, 105 (01)
  • [26] ELECTRON-MICROSCOPY STUDIES OF PULSED ELECTRON-BEAM ANNEALING IN PHOSPHORUS-IMPLANTED SILICON
    THOLOMIER, M
    PITAVAL, M
    AMBRI, M
    BARBIER, D
    LAUGIER, A
    JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) : 1588 - 1594
  • [27] Characterization of silicon surfaces implanted with silver ions at low energy using spectroscopic ellipsometry
    Bazarov, V. V.
    Nuzhdin, V. I.
    Valeev, V. F.
    Stepanov, A. L.
    VACUUM, 2018, 148 : 254 - 257
  • [28] HIGH-ENERGY IMPLANTATION AND ANNEALING OF PHOSPHORUS IN SILICON
    SKORUPA, W
    WIESER, E
    GROTZSCHEL, R
    POSSELT, M
    ARMIGLIATO, A
    GARULLI, A
    BEYER, A
    MARKGRAF, W
    EPM 87: ENERGY PULSE AND PARTICLE BEAM MODIFICATION OF MATERIALS, 1988, 8 : 161 - 163
  • [29] HIGH-ENERGY IMPLANTATION AND ANNEALING OF PHOSPHORUS IN SILICON
    SKORUPA, W
    WIESER, E
    GROETZSCHEL, R
    POSSELT, M
    BUECKE, H
    ARMIGLIATO, A
    GARULLI, A
    BEYER, A
    MARKGRAF, W
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 : 335 - 339
  • [30] HIGH ENERGY IMPLANTATION AND ANNEALING OF PHOSPHORUS IN SILICON.
    Skorupa, W.
    Wieser, E.
    Groetzschel, R.
    Posselt, M.
    Buecke, H.
    Armigliato, A.
    Garulli, A.
    Beyer, A.
    Markgraf, W.
    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1986, B19-20 : 335 - 339