Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers

被引：0

作者：

Coffin, H. ^{[1
]}

Bonafos, C. ^{[1
]}

Schamm, S. ^{[1
]}

Cherkashin, N. ^{[1
,4
]}

Assayag, G. Ben ^{[1
]}

Claverie, A. ^{[1
]}

Respaud, M. ^{[2
]}

Dimitrakis, P. ^{[3
]}

Normand, P. ^{[3
]}

机构：

[1] CEMES-CNRS, 29 rue J. Marvig, 31055 Toulouse, France

[2] LNMO, INSA, D̀�partement de Physique, 135 Avenue de Rangueil, 31077 Toulouse, France

[3] Institute of Microelectronics, NCSR Demokritos, 15310 Aghia Praskevi, Greece

[4] Ioffe Physico-Technical Institute, St. Petersburg 194021, Russia

来源：

Journal of Applied Physics | 1600年 / 99卷 / 04期

关键词：

The effect of thermal treatments in nitrogen-diluted oxygen on the structural characteristics of two-dimensional arrays of Si nanocrystals (NCs) fabricated by ultralow-energy ion implantation (1 keV) in thin silicon dioxide layers is reported. The NC characteristics (size; density; and coverage) have been measured by spatially resolved electron-energy-loss spectroscopy by using the spectrum-imaging mode of a scanning transmission electron microscope. Their evolution has been studied as a function of thermal treatment duration at a temperature (900 °C) below the Si O2 viscoelastic point. An extended spherical Deal-Grove [J. Appl. Phys. 36; 3770 (1965)] model for self-limiting oxidation of embedded silicon NCs has been carried out. It proposes that the stress effects; due to oxide deformation; slow down the NC oxidation rate and lead to a self-limiting oxide growth. The model predictions show a good agreement with the experimental results. Soft oxidation appears to be a powerful way for manipulating the NC size distribution and surface density. © 2006 American Institute of Physics;

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