Oxidation of Si nanocrystals fabricated by ultralow-energy ion implantation in thin SiO2 layers

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作者：
Coffin, H. [1 ]
Bonafos, C. [1 ]
Schamm, S. [1 ]
Cherkashin, N. [1 ,4 ]
Assayag, G. Ben [1 ]
Claverie, A. [1 ]
Respaud, M. [2 ]
Dimitrakis, P. [3 ]
Normand, P. [3 ]
机构：
[1] CEMES-CNRS, 29 rue J. Marvig, 31055 Toulouse, France
[2] LNMO, INSA, D̀�partement de Physique, 135 Avenue de Rangueil, 31077 Toulouse, France
[3] Institute of Microelectronics, NCSR Demokritos, 15310 Aghia Praskevi, Greece
[4] Ioffe Physico-Technical Institute, St. Petersburg 194021, Russia
来源：
Journal of Applied Physics | 1600年 / 99卷 / 04期
关键词：
The effect of thermal treatments in nitrogen-diluted oxygen on the structural characteristics of two-dimensional arrays of Si nanocrystals (NCs) fabricated by ultralow-energy ion implantation (1 keV) in thin silicon dioxide layers is reported. The NC characteristics (size; density; and coverage) have been measured by spatially resolved electron-energy-loss spectroscopy by using the spectrum-imaging mode of a scanning transmission electron microscope. Their evolution has been studied as a function of thermal treatment duration at a temperature (900 °C) below the Si O2 viscoelastic point. An extended spherical Deal-Grove [J. Appl. Phys. 36; 3770 (1965)] model for self-limiting oxidation of embedded silicon NCs has been carried out. It proposes that the stress effects; due to oxide deformation; slow down the NC oxidation rate and lead to a self-limiting oxide growth. The model predictions show a good agreement with the experimental results. Soft oxidation appears to be a powerful way for manipulating the NC size distribution and surface density. © 2006 American Institute of Physics;
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