Static and dynamic simulation of a physically-based model of silicon carbide PiN diode

被引：0
作者：
Hernández L. [1 ]
Arzate G. [1 ]
Brito Z. [1 ]
Rodríguez M. [2 ]
机构：
[1] ESIME-C Del IPN, Col. San Fco. Culhuacan
[2] Universidad Autónoma Del Carmen, Ciudad del Carmen, Campeche
来源：
Informacion Tecnologica | 2010年 / 21卷 / 05期
关键词：
Modelling; PiN diode; Silicon carbide; Simulation;
D O I：
10.1612/inf.tecnol.4387it.09
中图分类号：
学科分类号：
摘要：
This paper presents a method to solve the ambipolar diffusion equation for modeling and simulating the PiN diode in silicon carbide, using an empirical approximation. Through this methodology a set of differential equations that simulate the main physical phenomena associated to the power semiconductor device are obtained. The equations, implemented in Pspice, model in a more actual form the charges behaviour in the N- region of a PiN diode in silicon carbide for the static and dynamic phases. For the verification and validation of the model, the simulation results were compared with experimental data reported in the literature, obtaining accurate results for application in power electronic.
引用
收藏
页码：45 / 50
页数：5
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