Static and dynamic simulation of a physically-based model of silicon carbide PiN diode

被引：0
作者：
Hernández L. [1 ]
Arzate G. [1 ]
Brito Z. [1 ]
Rodríguez M. [2 ]
机构：
[1] ESIME-C Del IPN, Col. San Fco. Culhuacan
[2] Universidad Autónoma Del Carmen, Ciudad del Carmen, Campeche
来源：
Informacion Tecnologica | 2010年 / 21卷 / 05期
关键词：
Modelling; PiN diode; Silicon carbide; Simulation;
D O I：
10.1612/inf.tecnol.4387it.09
中图分类号：
学科分类号：
摘要：
This paper presents a method to solve the ambipolar diffusion equation for modeling and simulating the PiN diode in silicon carbide, using an empirical approximation. Through this methodology a set of differential equations that simulate the main physical phenomena associated to the power semiconductor device are obtained. The equations, implemented in Pspice, model in a more actual form the charges behaviour in the N- region of a PiN diode in silicon carbide for the static and dynamic phases. For the verification and validation of the model, the simulation results were compared with experimental data reported in the literature, obtaining accurate results for application in power electronic.
引用
收藏
页码：45 / 50
页数：5
相关论文
共 50 条
  • [21] Mechanical Behavior of Silicon Carbide Under Static and Dynamic Compression
    Zhang, D.
    Zhao, L. G.
    Roy, A.
    JOURNAL OF ENGINEERING MATERIALS AND TECHNOLOGY-TRANSACTIONS OF THE ASME, 2019, 141 (01):
  • [22] Geometric physically-based simulation of microfinishing: tool design impact on workpiece shape
    Siebrecht, Tobias
    Bergmann, Jim A.
    Heining, Ines
    Tilger, Meik
    Biermann, Dirk
    Wiederkehr, Petra
    PRODUCTION ENGINEERING-RESEARCH AND DEVELOPMENT, 2025, 19 (02): : 275 - 281
  • [23] A physically-based model for dissolved pollutant transport over impervious surfaces
    Zhang, Taotao
    Xiao, Yang
    Liang, Dongfang
    Tang, Hongwu
    Xu, Junzeng
    Yuan, Saiyu
    Luan, Bin
    JOURNAL OF HYDROLOGY, 2020, 590
  • [24] A unified physically-based finite deformation model for damage growth in composites
    Costa, Sergio
    Zrida, Hana
    Olsson, Robin
    Herraez, Miguel
    Ostlund, Rickard
    COMPOSITES PART A-APPLIED SCIENCE AND MANUFACTURING, 2022, 161
  • [25] Testing the robustness of the physically-based ECOMAG model with respect to changing conditions
    Gelfan, A.
    Motovilov, Yu
    Krylenko, I.
    Moreido, V.
    Zakharova, E.
    HYDROLOGICAL SCIENCES JOURNAL, 2015, 60 (7-8) : 1266 - 1285
  • [26] An improved silicon PIN diode based portable radon monitor
    Ashokkumar, P.
    Sahoo, B. K.
    Topkar, A.
    Raman, A.
    Babu, D. A. R.
    Sharma, D. N.
    Mayya, Y. S.
    INDIAN JOURNAL OF PHYSICS, 2013, 87 (05) : 471 - 477
  • [27] Characterization and Simulation of Neutron Irradiated JBS Silicon Carbide Diode Structures
    Popelka, Stanislav
    Hazdra, Pavel
    Zahlava, Vit
    MATERIALS AND APPLICATIONS FOR SENSORS AND TRANSDUCERS III, 2014, 605 : 151 - 154
  • [28] An improved silicon PIN diode based portable radon monitor
    P. Ashokkumar
    B. K. Sahoo
    A. Topkar
    A. Raman
    D. A. R. Babu
    D. N. Sharma
    Y. S. Mayya
    Indian Journal of Physics, 2013, 87 : 471 - 477
  • [29] A nuclear micro-battery based on silicon PIN diode
    Qiao Da-Yong
    Chen Xue-Jiao
    Ren Yong
    Zang Bo
    Yuan Wei-Zheng
    ACTA PHYSICA SINICA, 2011, 60 (02)
  • [30] Static and Dynamic Characterization of High Power Silicon Carbide BJT Modules
    Nawaz, Muhammad
    Chen, Nan
    Chimento, Filippo
    Wang, Liwei
    2014 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2014, : 2824 - 2831
12345