Static and dynamic simulation of a physically-based model of silicon carbide PiN diode

被引：0
作者：
Hernández L. [1 ]
Arzate G. [1 ]
Brito Z. [1 ]
Rodríguez M. [2 ]
机构：
[1] ESIME-C Del IPN, Col. San Fco. Culhuacan
[2] Universidad Autónoma Del Carmen, Ciudad del Carmen, Campeche
来源：
Informacion Tecnologica | 2010年 / 21卷 / 05期
关键词：
Modelling; PiN diode; Silicon carbide; Simulation;
D O I：
10.1612/inf.tecnol.4387it.09
中图分类号：
学科分类号：
摘要：
This paper presents a method to solve the ambipolar diffusion equation for modeling and simulating the PiN diode in silicon carbide, using an empirical approximation. Through this methodology a set of differential equations that simulate the main physical phenomena associated to the power semiconductor device are obtained. The equations, implemented in Pspice, model in a more actual form the charges behaviour in the N- region of a PiN diode in silicon carbide for the static and dynamic phases. For the verification and validation of the model, the simulation results were compared with experimental data reported in the literature, obtaining accurate results for application in power electronic.
引用
收藏
页码：45 / 50
页数：5
相关论文
共 50 条
  • [1] Silicon Carbide PiN Physically-Based Model Implemented in the Pspice Circuit Simulator
    Gonzalez, L. H.
    Claudio, A.
    Rodriguez, M. A.
    Ponce, M.
    Rosales, P.
    Zuniga-I, C.
    EPE: 2009 13TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS, VOLS 1-9, 2009, : 3777 - +
  • [2] Silicon carbide PIN diode for tritium detection
    Eymeoud, Paul
    Biondo, Stephane
    Vervisch, Vanessa
    Ottaviani, Laurent
    Grillet, Nadia
    Roussel, Luc
    Coulie, Karine
    Palais, Olivier
    Darreon, Julien
    Vervisch, Wilfried
    VACUUM, 2024, 230
  • [3] Laser endotaxy in silicon carbide and PIN diode fabrication
    Tian, Z.
    Quick, N. R.
    Kar, A.
    JOURNAL OF LASER APPLICATIONS, 2008, 20 (02) : 106 - 115
  • [4] Physically-based simulation of leaf movement
    Feng, JH
    Chen, YY
    Yan, T
    Wu, EH
    Tian, J
    PROCEEDINGS OF THE 6TH INTERNATIONAL CONFERENCE ON COMPUTER AIDED DESIGN & COMPUTER GRAPHICS, 1999, : 1229 - 1233
  • [5] MODELING CONTACTS IN A PHYSICALLY-BASED SIMULATION
    BOUMA, WJ
    VANECEK, G
    COMPUTER-AIDED DESIGN, 1994, 26 (06) : 452 - 464
  • [6] A Static and Dynamic Model for a Silicon Carbide Power MOSFET
    Phankong, Nathabhat
    Funaki, Tsuyoshi
    Hikihara, Takashi
    EPE: 2009 13TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS, VOLS 1-9, 2009, : 950 - +
  • [7] Full electrothermal physically-based modeling of the power diode using PSPICE
    Shaker, Ahmed
    Abouelatta, Mohamed
    El-Banna, Mohammed
    Ossaimee, Mahmoud
    Zekry, Abdelhalim
    SOLID-STATE ELECTRONICS, 2016, 116 : 70 - 79
  • [8] Reconstruction and physically-based animation of trees from static images
    Wu, EH
    Chen, YY
    Yan, T
    Feng, JH
    COMPUTER ANIMATION AND SIMULATION'99, 1999, : 157 - +
  • [9] Smoke Diffusion Simulation and Physically-Based Rendering for VR
    Psomathianos, George
    Sourdakos, Nikitas
    Moustakas, Konstantinos
    2021 INTERNATIONAL CONFERENCE ON CYBERWORLDS (CW 2021), 2021, : 117 - 120
  • [10] Physically based model for static and dynamic behaviour of TRIP steel
    Bouquerel, J.
    Verbeken, K.
    De Cooman, B. C.
    Houbaert, Y.
    Verleysen, P.
    Van Slycken, J.
    THERMEC 2006 SUPPLEMENT: 5TH INTERNATIONAL CONFERENCE ON PROCESSING AND MANUFACTURING OF ADVANCED MATERIALS, 2007, 15-17 : 744 - 749
12345