Residual stress analysis in the film/substrate system with the effect of creep deformation

被引：0
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作者：
Chen, Qing-Qi [1 ]
Xuan, Fu-Zhen [1 ]
Tu, Shan-Tung [1 ]
机构：
[1] Key Laboratory of Safety Science of Pressurized System, School of Mechanical Engineering, East China University of Science and Technology, Shanghai 200237, China
来源：
Journal of Applied Physics | 2009年 / 106卷 / 03期
关键词：
The physical phenomenon of residual stress relaxation and redistribution in the film/substrate systems due to creep deformation is focused in this work. A new analysis model to elucidate either the film or the substrate subjected to creeping deformation is developed. Specific analyses are made on the NiCrAlY coating-based system and silicon-epoxy bilayer structure. Results reveal that the proposed model can lead to an excellent agreement with the simulated results of finite element method. Furthermore; comparisons among FE results; the present model; and Zhang's creep solution [J. Appl. Phys. 101; 083530 (2007)] have been carried out. Meanwhile; comparisons between Hsueh's viscoelastic solution [J. Appl. Phys. 91; 2760 (2002)] and our current model in the case of creep exponent n=1 have also been conducted. Effects of thickness ratio of the film to the substrate on the stress distribution and the evolution of the accumulated creep strain have also been discussed in this paper. © 2009 American Institute of Physics;
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