Selective adsorption of benzoic acid species on patterned OH/Si(100) surface

被引：0

作者：

Ihm, Kyuwook ^{[1
]}

Han, Jin Hee ^{[1
]}

Kim, Bongsoo ^{[1
]}

Chung, Sukmin ^{[1
]}

Hwang, Chan-Cuk ^{[2
]}

Kang, Tai-Hee ^{[2
]}

Kim, Ki-Jeong ^{[2
]}

Jung, Yu Jin ^{[3
]}

An, Ki-Seok ^{[4
]}

机构：

[1] Department of Physics, POSTECH, Pohang, Kyungbuk 790-784, Korea, Republic of

[2] Beamline Research Division, Pohang Accelerator Laboratory (PAL), Pohang, Kyungbuk 790-784, Korea, Republic of

[3] Department of Chemistry, Division of Molecular and Life Sciences, Center for Integrated Molecular Systems, Pohang, Kyungbuk 790-784, Korea, Republic of

[4] Thin Film Materials Laboratory, Advanced Materials Division, Korea Research Institute of Chemical Technology, Daejeon 305-600, Korea, Republic of

来源：

Journal of Applied Physics | 2006年 / 100卷 / 04期

关键词：

It has recently been observed that benzoic acid strongly reacts with OH group on the silicon surface. Here; by defining the area in which OH group is adsorbed on the Si surface; the selective adsorption of benzoic acid species was attempted. The patterned OH/Si surface was prepared by irradiating the zeroth order beam from the bending magnet of the synchrotron facility through the gold mesh placed in front of the OH/Si sample. For discerning the selectively adsorbed molecule by x-ray photoelectron emission microscopy (X-PEEM) at N k edge; 4-nitrobenzoic acid was utilized instead of benzoic acid. Near edge x-ray absorption fine structure spectra at carbon and oxygen k edges were in good accord with the previous results obtained from the benzoic acid system. The X-PEEM images around N k edge clearly showed that the molecules adsorb only on the area in which OH groups remain. © 2006 American Institute of Physics;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Journal article (JA)

引用