Selective adsorption of benzoic acid species on patterned OH/Si(100) surface

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作者：
Ihm, Kyuwook [1 ]
Han, Jin Hee [1 ]
Kim, Bongsoo [1 ]
Chung, Sukmin [1 ]
Hwang, Chan-Cuk [2 ]
Kang, Tai-Hee [2 ]
Kim, Ki-Jeong [2 ]
Jung, Yu Jin [3 ]
An, Ki-Seok [4 ]
机构：
[1] Department of Physics, POSTECH, Pohang, Kyungbuk 790-784, Korea, Republic of
[2] Beamline Research Division, Pohang Accelerator Laboratory (PAL), Pohang, Kyungbuk 790-784, Korea, Republic of
[3] Department of Chemistry, Division of Molecular and Life Sciences, Center for Integrated Molecular Systems, Pohang, Kyungbuk 790-784, Korea, Republic of
[4] Thin Film Materials Laboratory, Advanced Materials Division, Korea Research Institute of Chemical Technology, Daejeon 305-600, Korea, Republic of
来源：
Journal of Applied Physics | 2006年 / 100卷 / 04期
关键词：
It has recently been observed that benzoic acid strongly reacts with OH group on the silicon surface. Here; by defining the area in which OH group is adsorbed on the Si surface; the selective adsorption of benzoic acid species was attempted. The patterned OH/Si surface was prepared by irradiating the zeroth order beam from the bending magnet of the synchrotron facility through the gold mesh placed in front of the OH/Si sample. For discerning the selectively adsorbed molecule by x-ray photoelectron emission microscopy (X-PEEM) at N k edge; 4-nitrobenzoic acid was utilized instead of benzoic acid. Near edge x-ray absorption fine structure spectra at carbon and oxygen k edges were in good accord with the previous results obtained from the benzoic acid system. The X-PEEM images around N k edge clearly showed that the molecules adsorb only on the area in which OH groups remain. © 2006 American Institute of Physics;
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