50 MeV lithium ion irradiation studies on silicon-germanium heterojunction bipolar transistors at low temperature

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作者：
Hegde, Vinayakprasanna N. [1 ]
Praveen, K.C. [2 ]
Pradeep, T.M. [3 ]
Cressler, John D. [4 ]
Prakash, A.P. Gnana [3 ]
机构：
[1] Department of Physics, Vidyavardhaka College of Engineering, Gokulam, Mysuru,570002, India
[2] Laboratory for Electro-Optics Systems (LEOS), ISRO, Bengaluru,560058, India
[3] Department of Studies in Physics, University of Mysore, Manasagangotri, Mysuru,570006, India
[4] School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta,GA,30332-0250, United States
来源：
Microelectronics Reliability | 2022年 / 137卷
关键词：
Compilation and indexing terms; Copyright 2025 Elsevier Inc;
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摘要：
Germanium - Heterojunction bipolar transistors - Heterojunctions - Ion bombardment - Lithium - Si-Ge alloys - Silicon - Temperature
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