50 MeV lithium ion irradiation studies on silicon-germanium heterojunction bipolar transistors at low temperature

被引：0
|
作者：
Hegde, Vinayakprasanna N. [1 ]
Praveen, K.C. [2 ]
Pradeep, T.M. [3 ]
Cressler, John D. [4 ]
Prakash, A.P. Gnana [3 ]
机构：
[1] Department of Physics, Vidyavardhaka College of Engineering, Gokulam, Mysuru,570002, India
[2] Laboratory for Electro-Optics Systems (LEOS), ISRO, Bengaluru,560058, India
[3] Department of Studies in Physics, University of Mysore, Manasagangotri, Mysuru,570006, India
[4] School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta,GA,30332-0250, United States
来源：
Microelectronics Reliability | 2022年 / 137卷
关键词：
Compilation and indexing terms; Copyright 2025 Elsevier Inc;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Germanium - Heterojunction bipolar transistors - Heterojunctions - Ion bombardment - Lithium - Si-Ge alloys - Silicon - Temperature
引用
收藏
相关论文
共 50 条
  • [21] Angular dependence of proton-induced single event transient in silicon-germanium heterojunction bipolar transistors
    魏佳男
    李洋
    廖文龙
    刘方
    李永宏
    刘建成
    贺朝会
    郭刚
    ChinesePhysicsB, 2022, 31 (08) : 473 - 478
  • [22] Low-temperature diffusion of lithium in silicon-germanium solid solutions
    I. G. Atabaev
    N. A. Matchanov
    É. N. Bakhranov
    Physics of the Solid State, 2001, 43 : 2234 - 2236
  • [23] Low-temperature diffusion of lithium in silicon-germanium solid solutions
    Atabaev, IG
    Matchanov, NA
    Bakhranov, ÉN
    PHYSICS OF THE SOLID STATE, 2001, 43 (12) : 2234 - 2236
  • [24] 3-D simulation of angled strike heavy-ion induced charge collection in silicon-germanium heterojunction bipolar transistors
    Zhang Jinxin
    Guo Hongxia
    Guo Qi
    Cui Jiangwei
    Wang Xin
    Deng Wei
    Zhen Qiwen
    Fan Xue
    Xiao Yao
    JOURNAL OF SEMICONDUCTORS, 2014, 35 (04)
  • [25] Silicon-Germanium Heterojunction Bipolar Transistor DC and AC Analysis Operating under Cryogenic Temperature
    Gupta, Dinesh
    Nayak, Kaushik
    ELECTRONICS, 2022, 11 (24)
  • [26] Analysis of base recombination effect in very high maximum oscillation frequency silicon-germanium heterojunction bipolar transistors
    Khanduri, G
    Panwar, BS
    2004 1st International Conference on Electrical and Electronics Engineering (ICEEE), 2004, : 231 - 236
  • [27] A low-temperature ion vapor deposition technique for silicon and silicon-germanium epitaxy
    Mohajerzadeh, S
    Selvakumar, CR
    Brodie, DE
    Robertson, MD
    Corbett, JM
    CANADIAN JOURNAL OF PHYSICS, 1996, 74 : S69 - S73
  • [28] Ion implantation and electron irradiation damage in unstrained germanium and silicon-germanium alloys
    Peaker, AR
    Markevich, VP
    Murin, LI
    Abrosimov, NV
    Litvinov, VV
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2005, 124 : 166 - 169
  • [29] Investigation of Device- and Circuit-Level Reliability of Inverse-Mode Silicon-Germanium Heterojunction Bipolar Transistors
    Kim, Taeyeong
    Kim, Garam
    Cho, Moon-Kyu
    Cressler, John D.
    Han, Jaeduk
    Song, Ickhyun
    SENSORS, 2024, 24 (22)
  • [30] The total-dose-effects of gamma and proton irradiations on high-voltage silicon-germanium heterojunction bipolar transistors
    Sun, Ya-Bin
    Fu, Jun
    Xu, Jun
    Wang, Yu-Dong
    Yang, Ji
    Zhou, Wei
    Zhang, Wei
    Cui, Jie
    Li, Gao-Qing
    Liu, Zhi-Hong
    Wei, Su-Min
    Wang, Feng
    Guan, Feng-Ping
    Li, Peng-Zhan
    Zhang, Tian-Jue
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2013, 168 (04): : 253 - 263
12345