Effects of annealing on carrier lifetime in 4H-SiC

被引：0
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作者：
Jenny, J.R. [1 ]
Malta, D.P. [1 ]
Tsvetkov, V.F. [1 ]
Das, M.K. [1 ]
Hobgood, H.Mcd. [1 ]
Carter Jr., C.H. [1 ]
Kumar, R.J. [2 ]
Borrego, J.M. [2 ]
Gutmann, R.J. [2 ]
Aavikko, R. [3 ]
机构：
[1] Cree Inc., 4600 Silicon Drive, Durham, NC 27703 27703, United States
[2] Rensselaer Polytechnic Institute, Troy, NY 12180
[3] Helsinki University of Technology, FIN-02015 HUT, Finland
来源：
Journal of Applied Physics | 2006年 / 100卷 / 11期
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